PUSKILL DDR3 1600 8G 8GB vs Crucial Technology BLS8G4D26BFSCK.8FD 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSCK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 -31% 更低的延时
更快的读取速度，GB/s

17 16.7

测试中的平均数值
更快的写入速度，GB/s

12.6 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 29
读取速度，GB/s

16.7 17.0
写入速度，GB/s

10.0 12.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 3140

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Transcend Information TS1GSH64V4B 8GB

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A-DATA Technology VDQVE1B16 2GB

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PUSKILL DDR3 1600 8G 8GB

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Corsair CMK32GX5M2B5600C36 16GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Essencore Limited KD4AGS88C-26N1900 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

Golden Empire CL15-15-15 D4-3000 8GB

Golden Empire CL15-15-15 D4-3000 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

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G Skill Intl F4-4000C18-8GTZR 8GB

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Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB