PUSKILL DDR3 1600 8G 8GB vs Crucial Technology CT4G4DFS8213.C8FHP 4GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Crucial Technology CT4G4DFS8213.C8FHP 4GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 13.2

测试中的平均数值
更快的写入速度，GB/s

10.0 6.2

测试中的平均数值

Crucial Technology CT4G4DFS8213.C8FHP 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FHP 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 38

左右 -58% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 24
读取速度，GB/s

16.7 13.2
写入速度，GB/s

10.0 6.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2753 1845

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M4 70T5663CZ3-CE6 2GB

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Corsair CMD64GX4M4A2666C15 16GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMK32GX4M4C3333C16 8GB

Corsair CMK32GX4M4C3333C16 8GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

SK Hynix HMA81GS6MFR8N-UH 8GB

SK Hynix HMA81GS6MFR8N-UH 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB