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PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3000C15-8GRRB 8GB

PUSKILL DDR3 1600 8G 8GB vs G Skill Intl F4-3000C15-8GRRB 8GB

总分
star star star star star
PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分
star star star star star
G Skill Intl F4-3000C15-8GRRB 8GB

G Skill Intl F4-3000C15-8GRRB 8GB

差异 规格 评论

差异

PUSKILL DDR3 1600 8G 8GB 需要考虑的原因
PUSKILL DDR3 1600 8G 8GB
报告一个错误
G Skill Intl F4-3000C15-8GRRB 8GB 需要考虑的原因
G Skill Intl F4-3000C15-8GRRB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 38
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 23
  • 读取速度，GB/s
    16.7 left arrow 17.7
  • 写入速度，GB/s
    10.0 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2753 left arrow 3115

PUSKILL DDR3 1600 8G 8GB RAM的比较

A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB

G Skill Intl F4-3000C15-8GRRB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2666C19-8GVR 8GB
G Skill Intl F4-2666C19-8GVR 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT8G4SFD824AC16FBD1 8GB
Crucial Technology CT8G4SFD824AC16FBD1 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CB8GU2400.C8D 8GB
Crucial Technology CB8GU2400.C8D 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
内存RAM
SK Hynix HMT351S6CFR8C-H9 4GB
SK Hynix HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Avant Technology J642GU42J2320NQ 16GB
Avant Technology J642GU42J2320NQ 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C15-8GVK 8GB
G Skill Intl F4-3200C15-8GVK 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston M378A1K43CB2-CRC 8GB
Kingston M378A1K43CB2-CRC 8GB
内存RAM