PUSKILL DDR3 1600 8G 8GB vs Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 41

左右 7% 更低的延时
更快的读取速度，GB/s

16.7 15.8

测试中的平均数值

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

报告一个错误

更快的写入速度，GB/s

13.6 10.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 41
读取速度，GB/s

16.7 15.8
写入速度，GB/s

10.0 13.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2753 3073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Kingston 9905663-021.A00G 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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Golden Empire CL16-18-18 D4-3000 16GB

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Protocol Engines Kingrock 800 2GB 2GB

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Samsung M471B5173DB0-YK0 4GB

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Samsung M474A2K43BB1-CPB 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

A-DATA Technology DDR4 4133 8GB

A-DATA Technology DDR4 4133 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Kingston 9905702-017.A00G 8GB

Kingston 9905702-017.A00G 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Mushkin MR[A/B]4U320LLLM8G 8GB

Mushkin MR[A/B]4U320LLLM8G 8GB