PUSKILL DDR3 1600 8G 8GB vs Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 38

左右 -73% 更低的延时
更快的读取速度，GB/s

17.7 16.7

测试中的平均数值
更快的写入速度，GB/s

13.1 10.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 22
读取速度，GB/s

16.7 17.7
写入速度，GB/s

10.0 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2753 2666

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2400C14-16GRK 16GB

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Corsair CMK32GX4M2K3600C16 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston 9965516-112.A00LF 16GB

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G Skill Intl F4-3000C16-8GTRS 8GB

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Apacer Technology 78.CAGPP.40C0B 8GB

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Corsair CMU64GX4M4C3000C15 16GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT32G4SFD8266.C16FB 32GB

Crucial Technology CT32G4SFD8266.C16FB 32GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Corsair CMU32GX4M4C3000C15 8GB

Corsair CMU32GX4M4C3000C15 8GB