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PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
比较
PUSKILL DDR3 1600 8G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
总分
PUSKILL DDR3 1600 8G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
PUSKILL DDR3 1600 8G 8GB
报告一个错误
更快的读取速度,GB/s
16.7
9.3
测试中的平均数值
更快的写入速度,GB/s
10.0
7.0
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
38
左右 -6% 更低的延时
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
38
36
读取速度,GB/s
16.7
9.3
写入速度,GB/s
10.0
7.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2753
1891
PUSKILL DDR3 1600 8G 8GB RAM的比较
A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB RAM的比较
Kingston 9965516-112.A00LF 16GB
Samsung M378A1K43EB2-CWE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99P5471-002.A00LF 2GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3200C16-8GTZSK 8GB
Kingston 9905403-515.A00LF 8GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMD16GX4M4B3333C16 4GB
PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Essencore Limited KD48GU88C-26N1600 8GB
Apacer Technology 78.CAGP7.4020B 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-3200C16-8GIS 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Kingston 9905471-002.A00LF 2GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT16G4S24AM.M16FB 16GB
报告一个错误
×
Bug description
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