PUSKILL DDR3 1600 8G 8GB vs Kingston 9905625-029.A00G 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Kingston 9905625-029.A00G 8GB

Kingston 9905625-029.A00G 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 14.5

测试中的平均数值
更快的写入速度，GB/s

10.0 9.8

测试中的平均数值

Kingston 9905625-029.A00G 8GB

需要考虑的原因
Kingston 9905625-029.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 -12% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Kingston 9905625-029.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 34
读取速度，GB/s

16.7 14.5
写入速度，GB/s

10.0 9.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2753 2565

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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Ramaxel Technology RMSA3260MH78H8H-2666 8GB

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Kingston 9905316-106.A02LF 1GB

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G Skill Intl F4-2133C15-8GVK 8GB

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Samsung M393A1G40DB0-CPB 8GB

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Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

PUSKILL DDR3 1600 8G 8GB

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Crucial Technology CT8G3S186DM.M16FP 8GB

Crucial Technology CT8G3S186DM.M16FP 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

SK Hynix GKE800SO102408-2400 8GB

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Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9905703-009.A00G 16GB