RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PUSKILL DDR3 1600 8G 8GB
Kingston KHX3000C15/16GX 16GB

PUSKILL DDR3 1600 8G 8GB vs Kingston KHX3000C15/16GX 16GB

总分
star star star star star
PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分
star star star star star
Kingston KHX3000C15/16GX 16GB

Kingston KHX3000C15/16GX 16GB

差异 规格 评论

差异

PUSKILL DDR3 1600 8G 8GB 需要考虑的原因
PUSKILL DDR3 1600 8G 8GB
报告一个错误
Kingston KHX3000C15/16GX 16GB 需要考虑的原因
Kingston KHX3000C15/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 38
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
PUSKILL DDR3 1600 8G 8GB
Kingston KHX3000C15/16GX 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 30
  • 读取速度，GB/s
    16.7 left arrow 17.4
  • 写入速度，GB/s
    10.0 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2753 left arrow 3454

PUSKILL DDR3 1600 8G 8GB RAM的比较

A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB

Kingston KHX3000C15/16GX 16GB RAM的比较

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR26D4S9S8ME-8 8GB
Kingston ACR26D4S9S8ME-8 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-2400C17-16GIS 16GB
G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston KHX3200C20S4/16GX 16GB
Kingston KHX3200C20S4/16GX 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD16GX4M4B3000C15 4GB
Corsair CMD16GX4M4B3000C15 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Corsair CMK8GX4M2A2133C13 4GB
Corsair CMK8GX4M2A2133C13 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston XRMWRN-MIE2 16GB
Kingston XRMWRN-MIE2 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Neo Forza NMUD416E82-3600 16GB
Neo Forza NMUD416E82-3600 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston KHX3000C15/16GX 16GB
Kingston KHX3000C15/16GX 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2666C15-4GRR 4GB
G Skill Intl F4-2666C15-4GRR 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMR16GX4M2F4000C19 8GB
Corsair CMR16GX4M2F4000C19 8GB
内存RAM
PNY Electronics 4GBH2X02E99927-16 4GB
PNY Electronics 4GBH2X02E99927-16 4GB
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung V-GeN D4S16GL32A8TS 16GB
内存RAM