PUSKILL DDR3 1600 8G 8GB vs Kingston XRGM6C-MIE 16GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Kingston XRGM6C-MIE 16GB

Kingston XRGM6C-MIE 16GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 16.5

测试中的平均数值

Kingston XRGM6C-MIE 16GB

需要考虑的原因
Kingston XRGM6C-MIE 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 38

左右 -19% 更低的延时
更快的写入速度，GB/s

13.8 10.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Kingston XRGM6C-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 32
读取速度，GB/s

16.7 16.5
写入速度，GB/s

10.0 13.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2753 3347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hewlett-Packard 7EH64AA# 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

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Mushkin 99[2/7/4]199F 8GB

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Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB