PUSKILL DDR3 1600 8G 8GB vs Micron Technology 16ATF2G64HZ-2G3E1 16GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 14.2

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G3E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 38

左右 -3% 更低的延时
更快的写入速度，GB/s

10.7 10.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 37
读取速度，GB/s

16.7 14.2
写入速度，GB/s

10.0 10.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2753 2591

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston K9CXF2-MIE 8GB

Kingston K9CXF2-MIE 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Apacer Technology GD2.0918CT.001 4GB

Apacer Technology GD2.0918CT.001 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Mushkin MR[A/B]4U320LLLM16G 16GB

Mushkin MR[A/B]4U320LLLM16G 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Kingston KYXC0V-MID 16GB

Kingston KYXC0V-MID 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

Crucial Technology CT16G4DFD824A.C16FBD 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

G Skill Intl F4-3200C16-8GTZN 8GB

G Skill Intl F4-3200C16-8GTZN 8GB