PUSKILL DDR3 1600 8G 8GB vs Roa Logic BV W4U2666CX1-8G 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Roa Logic BV W4U2666CX1-8G 8GB

Roa Logic BV W4U2666CX1-8G 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 16.5

测试中的平均数值

Roa Logic BV W4U2666CX1-8G 8GB

需要考虑的原因
Roa Logic BV W4U2666CX1-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 -36% 更低的延时
更快的写入速度，GB/s

13.7 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Roa Logic BV W4U2666CX1-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 28
读取速度，GB/s

16.7 16.5
写入速度，GB/s

10.0 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 3217

RAM Latency Calculator

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RAM 2

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最新比较

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Corsair CM3X8GA2400C11Y2R 8GB

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Chun Well Technology Holding Limited D4U0832161B 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Apacer Technology 78.CAGN7.4000C 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Crucial Technology CT16G4DFD8213.C16FBR 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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Kingston 9905624-013.A00G 8GB

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SK Hynix HMA41GU6AFR8N-TF 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Kingston KHX2133C14D4/4G 4GB

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PNY Electronics PNY 2GB

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Corsair CMR64GX4M4C3200C16 16GB

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Kingston KHX2400C11D3/4GX 4GB

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Panram International Corporation PUD43000C158G2NJK 8GB

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Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3200C16-8GVGB 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

Samsung M393B2G70BH0-CH9 16GB

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Kingston XN205T-MIE2 16GB

Kingston XN205T-MIE2 16GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Super Talent F24EA8GS 8GB

Super Talent F24EA8GS 8GB