PUSKILL DDR3 1600 8G 8GB vs Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 74

左右 49% 更低的延时
更快的读取速度，GB/s

16.7 13.8

测试中的平均数值
更快的写入速度，GB/s

10.0 7.9

测试中的平均数值

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 74
读取速度，GB/s

16.7 13.8
写入速度，GB/s

10.0 7.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 1825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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SK Hynix HMA82GS7AFR8N-UH 16GB

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Samsung 1600 CL10 Series 8GB

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Corsair CMZ8GX3M2A1600C7 4GB

Corsair CMZ8GX3M2A1600C7 4GB

Corsair CMT32GX5M2B5200C38 16GB

Corsair CMT32GX5M2B5200C38 16GB

Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F4-3333C16-8GTZSK 8GB

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Kingston 9905471-001.A01LF 2GB

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G Skill Intl F4-2666C15-8GRKB 8GB

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