PUSKILL DDR3 1600 8G 8GB vs Teikon TMA851S6CJR6N-VKSC 4GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Teikon TMA851S6CJR6N-VKSC 4GB

需要考虑的原因
Teikon TMA851S6CJR6N-VKSC 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更快的读取速度，GB/s

17 16.7

测试中的平均数值
更快的写入速度，GB/s

12.2 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Teikon TMA851S6CJR6N-VKSC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 27
读取速度，GB/s

16.7 17.0
写入速度，GB/s

10.0 12.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 2379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PUSKILL DDR3 1600 8G 8GB

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Teikon TMA851S6CJR6N-VKSC 4GB

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Kingston KHX1600C9D3/4G 4GB

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G Skill Intl F4-3400C16-8GSXW 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology CT8G4SFS824A.C8FDD1 8GB

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Apacer Technology 78.C1GET.9K10C 8GB

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Kingston KF3000C16D4/32GX 32GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Lexar Co Limited LD4AU016G-H2666G 16GB

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Corsair CM4B8G2J3000K15K 8GB

Corsair CM4B8G2J3000K15K 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston XCCT36-MIE 16GB

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G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

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Qimonda 72T128420EFA3SB2 1GB

Kingston 99U5702-020.A00G 8GB

Kingston 99U5702-020.A00G 8GB