Qimonda 64T128020EDL2.5C2 1GB vs Asgard VMA41UF-MEC1U2BQ2 4GB

总分

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

总分

Asgard VMA41UF-MEC1U2BQ2 4GB

Asgard VMA41UF-MEC1U2BQ2 4GB

差异规格评论

差异

Qimonda 64T128020EDL2.5C2 1GB

需要考虑的原因
Qimonda 64T128020EDL2.5C2 1GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值

Asgard VMA41UF-MEC1U2BQ2 4GB

需要考虑的原因
Asgard VMA41UF-MEC1U2BQ2 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 79

左右 -172% 更低的延时
更快的写入速度，GB/s

12.0 1,468.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Qimonda 64T128020EDL2.5C2 1GB

Asgard VMA41UF-MEC1U2BQ2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

79 29
读取速度，GB/s

3,061.8 15.7
写入速度，GB/s

1,468.1 12.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

422 2553

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KTP9W1-MID 16GB

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Smart Modular SF4641G8CKHI6DFSDS 8GB

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Crucial Technology BLS8G4D240FSB.16FBR2 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9965589-043.E00G 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Kingston 99U5584-010.A00LF 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK128GX4M8B3000C16 16GB

Corsair CMK128GX4M8B3000C16 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMD8GX4M2B4000C19 4GB

Corsair CMD8GX4M2B4000C19 4GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Corsair CM4B8G2J2133A15S 8GB

Corsair CM4B8G2J2133A15S 8GB