Qimonda 64T128020EDL2.5C2 1GB vs Crucial Technology CT16G4SFS832A.M8FE 16GB

总分

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

总分

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

差异规格评论

差异

Qimonda 64T128020EDL2.5C2 1GB

需要考虑的原因
Qimonda 64T128020EDL2.5C2 1GB

报告一个错误

更快的读取速度，GB/s

3 12.7

测试中的平均数值

Crucial Technology CT16G4SFS832A.M8FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFS832A.M8FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 79

左右 -114% 更低的延时
更快的写入速度，GB/s

11.7 1,468.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Qimonda 64T128020EDL2.5C2 1GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

79 37
读取速度，GB/s

3,061.8 12.7
写入速度，GB/s

1,468.1 11.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

422 2734

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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AMD R5316G1609U2K 8GB

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Corsair CMU32GX4M4D3000C16 8GB

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PNY Electronics PNY 2GB

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Samsung M471A1G44AB0-CWE 8GB

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Kingston KVR800D2N6/2G 2GB

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Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Kingston KHX2666C16/8G 8GB

Kingston KHX2666C16/8G 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB