Qimonda 64T128020EDL2.5C2 1GB vs Micron Technology 8ATF2G64AZ-3G2B1 16GB

总分

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

总分

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

差异规格评论

差异

Qimonda 64T128020EDL2.5C2 1GB

需要考虑的原因
Qimonda 64T128020EDL2.5C2 1GB

报告一个错误

更快的读取速度，GB/s

3 19.5

测试中的平均数值

Micron Technology 8ATF2G64AZ-3G2B1 16GB

需要考虑的原因
Micron Technology 8ATF2G64AZ-3G2B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 79

左右 -114% 更低的延时
更快的写入速度，GB/s

12.4 1,468.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Qimonda 64T128020EDL2.5C2 1GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

79 37
读取速度，GB/s

3,061.8 19.5
写入速度，GB/s

1,468.1 12.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

422 3355

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

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Corsair CMK32GX5M2B5600C36 16GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Essencore Limited KD48GU481-26N1600 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-2800C15-16GVR 16GB

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Kingston 9965596-036.B00G 8GB

Kingston 9965596-036.B00G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung M393A2G40DBD-CP1???? 16GB

Samsung M393A2G40DBD-CP1???? 16GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB