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Qimonda 64T128020EDL2.5C2 1GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

Qimonda 64T128020EDL2.5C2 1GB vs Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

总分
star star star star star
Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

总分
star star star star star
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

差异 规格 评论

差异

Qimonda 64T128020EDL2.5C2 1GB 需要考虑的原因
Qimonda 64T128020EDL2.5C2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.3
    测试中的平均数值
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 79
    左右 -243% 更低的延时
  • 更快的写入速度，GB/s
    12.4 left arrow 1,468.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Qimonda 64T128020EDL2.5C2 1GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    79 left arrow 23
  • 读取速度，GB/s
    3,061.8 left arrow 16.3
  • 写入速度，GB/s
    1,468.1 left arrow 12.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    422 left arrow 2637

Qimonda 64T128020EDL2.5C2 1GB RAM的比较

Micron Technology 8HTF12864HDY-800G1 1GB
G Skill Intl F4-2666C18-8GFX 8GB

Wilk Elektronik S.A. GY2400D464L15S/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMD16GX4M4B3000C14 4GB
Corsair CMD16GX4M4B3000C14 4GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905630-052.A00G 16GB
Kingston 9905630-052.A00G 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Corsair CMT32GX4M2D3600C18 16GB
Corsair CMT32GX4M2D3600C18 16GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMW32GX4M4Z2933C16 8GB
Corsair CMW32GX4M4Z2933C16 8GB
内存RAM