Qimonda 72T128420EFA3SB2 1GB vs Crucial Technology BLS8G4D240FSC.16FBD 8GB

总分

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分

Crucial Technology BLS8G4D240FSC.16FBD 8GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

差异规格评论

差异

Qimonda 72T128420EFA3SB2 1GB

需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB

报告一个错误

更快的读取速度，GB/s

3 16.6

测试中的平均数值
更快的写入速度，GB/s

2,069.2 12.2

测试中的平均数值

Crucial Technology BLS8G4D240FSC.16FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSC.16FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 106

左右 -231% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Qimonda 72T128420EFA3SB2 1GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

106 32
读取速度，GB/s

3,273.7 16.6
写入速度，GB/s

2,069.2 12.2
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

734 2854

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G32C16U4W.16FE 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Corsair CMK16GX4M2K4333C19 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905630-031.A00G 16GB

Kingston 9905630-031.A00G 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-3600C17-16GTZKK 16GB

G Skill Intl F4-3600C17-16GTZKK 16GB