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Qimonda 72T128420EFA3SB2 1GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

Qimonda 72T128420EFA3SB2 1GB vs SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

总分
star star star star star
Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分
star star star star star
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

差异 规格 评论

差异

Qimonda 72T128420EFA3SB2 1GB 需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,069.2 left arrow 10.6
    测试中的平均数值
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB 需要考虑的原因
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 106
    左右 -342% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Qimonda 72T128420EFA3SB2 1GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    106 left arrow 24
  • 读取速度，GB/s
    3,273.7 left arrow 15.4
  • 写入速度，GB/s
    2,069.2 left arrow 10.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    734 left arrow 2462

Qimonda 72T128420EFA3SB2 1GB RAM的比较

Qimonda 72T128401EFA3SC2 512MB
Kingston KP6FH5-MIE 32GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
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Corsair CM3X1024-1333C9 1GB
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G Skill Intl F5-6400J3239G16G 16GB
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G Skill Intl F4-3200C16-16GTZRX 16GB
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Patriot Memory (PDP Systems) PSD416G320081 16GB
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内存RAM
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内存RAM
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Kingston 9905469-107.A00LF 4GB
内存RAM
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A-DATA Technology DDR4 2666 8GB
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Samsung M378A2K43BB1-CRC 16GB
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Hexon Technology Pte Ltd HEXON 1GB
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Kingston 99U5704-001.A00G 4GB
内存RAM
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Crucial Technology CT102464BF160B.C16 8GB
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Micron Technology 36ASF2G72PZ-2G4AT 16GB
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