RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更快的读取速度,GB/s
16
15.4
测试中的平均数值
更快的写入速度,GB/s
12.5
10.6
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
24
读取速度,GB/s
16.0
15.4
写入速度,GB/s
12.5
10.6
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2462
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
Kingston 9905403-156.A00LF 2GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M393B1G70BH0-CK0 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Avant Technology W6451U66J9266ND 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Samsung M378A2G43MX3-CTD 16GB
报告一个错误
×
Bug description
Source link