Ramos Technology EWB8GB681CA3-16IC 8GB vs SK Hynix HMA81GS6JJR8N-VK 8GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 34

左右 26% 更低的延时

SK Hynix HMA81GS6JJR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6JJR8N-VK 8GB

报告一个错误

更快的读取速度，GB/s

15.7 15.3

测试中的平均数值
更快的写入速度，GB/s

11.9 9.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 34
读取速度，GB/s

15.3 15.7
写入速度，GB/s

9.8 11.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2646 2803

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMG32GX4M2D3600C18 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Apacer Technology 78.01GA0.9K5 1GB

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Kingston 9905458-017.A01LF 4GB

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Panram International Corporation PUD42400C154G2NJW 4GB

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Samsung M378B5673FH0-CH9 2GB

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A-DATA Technology DDR3 1600 4GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Crucial Technology BLS16G4D240FSE.16FD 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3866C18-8GTZ 8GB

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Kingston 99P5474-014.A00LF 4GB

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Crucial Technology CT8G4DFD8213.C16FHP 8GB

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Corsair CML8GX3M2A1600C9 4GB

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Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB