Ramaxel Technology RMR5030ME68F9F1600 4GB vs Crucial Technology CT4G4DFS8213.C8FAR11 4GB

总分

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

总分

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

差异规格评论

差异

Ramaxel Technology RMR5030ME68F9F1600 4GB

需要考虑的原因
Ramaxel Technology RMR5030ME68F9F1600 4GB

报告一个错误

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR11 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 42

左右 -20% 更低的延时
更快的读取速度，GB/s

13.7 13.2

测试中的平均数值
更快的写入速度，GB/s

10.7 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5030ME68F9F1600 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 35
读取速度，GB/s

13.2 13.7
写入速度，GB/s

7.8 10.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2001 2731

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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Wilk Elektronik S.A. IR2133D464L15S/4G 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB