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Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB vs Micron Technology 18ASF1G72PZ-2G1B1 8GB

总分
star star star star star
Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

总分
star star star star star
Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

差异 规格 评论

差异

Ramaxel Technology RMR5030ME68F9F1600 4GB 需要考虑的原因
Ramaxel Technology RMR5030ME68F9F1600 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 46
    左右 9% 更低的延时
  • 更快的读取速度，GB/s
    13.2 left arrow 11
    测试中的平均数值
Micron Technology 18ASF1G72PZ-2G1B1 8GB 需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1B1 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 46
  • 读取速度，GB/s
    13.2 left arrow 11.0
  • 写入速度，GB/s
    7.8 left arrow 9.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2001 left arrow 2396

Ramaxel Technology RMR5030ME68F9F1600 4GB RAM的比较

Ramaxel Technology RMR5030EB68F9W1600 4GB
Samsung M378A1K43BB2-CRC 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SK Hynix HMA82GS6AFRFR-UH 16GB
SK Hynix HMA82GS6AFRFR-UH 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
Kingston 9905713-008.A00G 4GB
Kingston 9905713-008.A00G 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905663-012.A00G 16GB
Kingston 9905663-012.A00G 16GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Kingston 9905598-040.A00G 16GB
Kingston 9905598-040.A00G 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Corsair CMK16GX4M2Z2400C16 8GB
Corsair CMK16GX4M2Z2400C16 8GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston KHX2400C14S4/8G 8GB
Kingston KHX2400C14S4/8G 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9932291-002.A00G 4GB
Kingston 9932291-002.A00G 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
内存RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Corsair CM4X8GC3000C15K4 8GB
Corsair CM4X8GC3000C15K4 8GB
内存RAM