Ramaxel Technology RMR5040ED58E9W1600 4GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB vs Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 43

左右 -139% 更低的延时
更快的读取速度，GB/s

20.8 13.2

测试中的平均数值
更快的写入速度，GB/s

15.1 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 18
读取速度，GB/s

13.2 20.8
写入速度，GB/s

9.3 15.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2285 3402

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Avexir Technologies Corporation T 4GB

Avexir Technologies Corporation T 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BL16G32C16S4B.8FB 16GB

Crucial Technology BL16G32C16S4B.8FB 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9965640-001.C00G 16GB

Kingston 9965640-001.C00G 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3000C15-4GRBB 4GB

G Skill Intl F4-3000C15-4GRBB 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Crucial Technology CT16G4DFD8213.C16FBR 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3000C16-8GTZN 8GB

G Skill Intl F4-3000C16-8GTZN 8GB