Ramaxel Technology RMR5040ED58E9W1600 4GB vs G Skill Intl F4-2400C16-8GRS 8GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

G Skill Intl F4-2400C16-8GRS 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 43

左右 -26% 更低的延时
更快的读取速度，GB/s

15.4 13.2

测试中的平均数值
更快的写入速度，GB/s

11.9 9.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

G Skill Intl F4-2400C16-8GRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 34
读取速度，GB/s

13.2 15.4
写入速度，GB/s

9.3 11.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2285 2780

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C16-8GRS 8GB

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SK Hynix HMT31GR7EFR4C-H9 8GB

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Kingston 9905403-011.A03LF 2GB

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Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Patriot Memory (PDP Systems) PSD34G1600L81S 4GB

Patriot Memory (PDP Systems) PSD34G1600L81S 4GB