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Ramaxel Technology RMR5040ED58E9W1600 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB

Ramaxel Technology RMR5040ED58E9W1600 4GB vs InnoDisk Corporation M4S0-AGS1O5IK 16GB

总分
star star star star star
Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分
star star star star star
InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

差异 规格 评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB 需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.2 left arrow 13.1
    测试中的平均数值
InnoDisk Corporation M4S0-AGS1O5IK 16GB 需要考虑的原因
InnoDisk Corporation M4S0-AGS1O5IK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 43
    左右 -2% 更低的延时
  • 更快的写入速度，GB/s
    11.5 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMR5040ED58E9W1600 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 42
  • 读取速度，GB/s
    13.2 left arrow 13.1
  • 写入速度，GB/s
    9.3 left arrow 11.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2285 left arrow 2525

Ramaxel Technology RMR5040ED58E9W1600 4GB RAM的比较

G Skill Intl F3-1600C11-8GISL 8GB
A-DATA Technology DDR4 4133 8GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
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InnoDisk Corporation M4S0-AGS1O5IK 16GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
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内存RAM