Ramaxel Technology RMR5040ED58E9W1600 4GB vs Kingston MSI21D4S15HAG/8G 8GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Kingston MSI21D4S15HAG/8G 8GB

Kingston MSI21D4S15HAG/8G 8GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Kingston MSI21D4S15HAG/8G 8GB

需要考虑的原因
Kingston MSI21D4S15HAG/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 -59% 更低的延时
更快的读取速度，GB/s

13.5 13.2

测试中的平均数值
更快的写入速度，GB/s

10.5 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Kingston MSI21D4S15HAG/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 27
读取速度，GB/s

13.2 13.5
写入速度，GB/s

9.3 10.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2285 2300

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Super Talent F24UB16GV 16GB

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Kingston KHX3200C18D4/8G 8GB

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Crucial Technology CT8G4SFS824A.M8FB 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Kingston MSI21D4S15HAG/8G 8GB

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PNY Electronics PNY 2GB

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Crucial Technology CT8G4DFD8213.C16FDR2 8GB

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Samsung M378B5673EH1-CF8 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

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Corsair CMX8GX3M2A1600C11 4GB

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Mushkin MR[ABC]4U360JNNM8G 8GB

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Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB