Ramaxel Technology RMR5040ED58E9W1600 4GB vs Kingston XK2M26-MIE-NX 16GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Kingston XK2M26-MIE-NX 16GB

需要考虑的原因
Kingston XK2M26-MIE-NX 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更快的读取速度，GB/s

19.2 13.2

测试中的平均数值
更快的写入速度，GB/s

11.8 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Kingston XK2M26-MIE-NX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 36
读取速度，GB/s

13.2 19.2
写入速度，GB/s

9.3 11.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2285 3256

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1G44AB0-CWE 8GB

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Corsair CMK16GX4M4A2400C14 4GB

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Kingston 99U5474-023.A00LF 4GB

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Kingston KHX3600C17D4/16GX 16GB

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Corsair CML16GX3M2A1600C10 8GB

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G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F4-2666C19-16GRS 16GB

Corsair CMSO8GX4M1A2133C15 8GB

Corsair CMSO8GX4M1A2133C15 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

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Kingmax Semiconductor KLCC28F-A8KI5 512MB

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Crucial Technology CT16G4SFD8213.C16FBR 16GB