RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
比较
Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Micron Technology 8ATF1G64HZ-2G3A1 8GB
总分
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
总分
Micron Technology 8ATF1G64HZ-2G3A1 8GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3A1 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
42
左右 -45% 更低的延时
更快的读取速度,GB/s
13.4
13.3
测试中的平均数值
更快的写入速度,GB/s
9.5
7.8
测试中的平均数值
规格
完整的技术规格清单
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
42
29
读取速度,GB/s
13.3
13.4
写入速度,GB/s
7.8
9.5
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2181
2312
Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-YK0 16GB
Corsair CM4B8G2J3000K15K 8GB
Samsung M471B5273DH0-CH9 4GB
Kingston KHX2400C15S4/16G 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMK32GX4M2D3600C16 16GB
PNY Electronics PNY 2GB
Samsung M378A1K43CB2-CTD 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Corsair CMV4GX3M1B1600C11 4GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905743-043.A00G 16GB
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston 9905702-007.A00G 8GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-2800C15-8GRBB 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M386A4G40DM1-CRC 32GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology AFLD416EH1P 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-3000C14-16GVK 16GB
报告一个错误
×
Bug description
Source link