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Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Smart Modular SF4641G8CK8IEHLSBG 8GB

总分
star star star star star
Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

总分
star star star star star
Smart Modular SF4641G8CK8IEHLSBG 8GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

差异 规格 评论

差异

Ramaxel Technology RMSA3260NA78HAF-2666 8GB 需要考虑的原因
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
报告一个错误
Smart Modular SF4641G8CK8IEHLSBG 8GB 需要考虑的原因
Smart Modular SF4641G8CK8IEHLSBG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 42
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 36
  • 读取速度，GB/s
    13.3 left arrow 14.8
  • 写入速度，GB/s
    7.8 left arrow 10.4
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2181 left arrow 2515

Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Smart Modular SF4641G8CK8IEHLSBG 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M471A1G43EB1-CRC 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
G Skill Intl F4-2133C15-4GRS 4GB
G Skill Intl F4-2133C15-4GRS 4GB
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Crucial Technology CT51264BD1339.M16F 4GB
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Asgard VMA45UG-MEC1U2AW1 8GB
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Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Mushkin MR[ABC]4U320GJJM16G 16GB
Mushkin MR[ABC]4U320GJJM16G 16GB
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Kingston 9905625-036.A00G 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
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Corsair CMK128GX4M8Z2933C16 16GB
内存RAM
SK Hynix HMT351U6AFR8C-H9 4GB
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内存RAM
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内存RAM
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内存RAM
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Nanya Technology NT512T64U88B0BY-3C 512MB
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