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Ramaxel Technology RMT3010EC58E8F1333 2GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB

Ramaxel Technology RMT3010EC58E8F1333 2GB vs Crucial Technology BLS4G4D26BFSB.8FE 4GB

总分
star star star star star
Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

差异 规格 评论

差异

Ramaxel Technology RMT3010EC58E8F1333 2GB 需要考虑的原因
Ramaxel Technology RMT3010EC58E8F1333 2GB
报告一个错误
Crucial Technology BLS4G4D26BFSB.8FE 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.7 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3010EC58E8F1333 2GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 26
  • 读取速度，GB/s
    13.5 left arrow 17.7
  • 写入速度，GB/s
    7.8 left arrow 14.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1932 left arrow 3055

Ramaxel Technology RMT3010EC58E8F1333 2GB RAM的比较

Nanya Technology M2S2G64CB88G5N-DI 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-2933C14-16GFX 16GB
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