Ramaxel Technology RMT3010EC58E8F1333 2GB vs Samsung M471A2K43BB1-CPB 16GB

总分

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

总分

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

差异规格评论

差异

Ramaxel Technology RMT3010EC58E8F1333 2GB

需要考虑的原因
Ramaxel Technology RMT3010EC58E8F1333 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时

Samsung M471A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M471A2K43BB1-CPB 16GB

报告一个错误

更快的读取速度，GB/s

13.6 13.5

测试中的平均数值
更快的写入速度，GB/s

9.2 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3010EC58E8F1333 2GB

Samsung M471A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 38
读取速度，GB/s

13.5 13.6
写入速度，GB/s

7.8 9.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1932 2434

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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Memphis Electronic D4SO1G724GI-A58SD 8GB

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Team Group Inc. TEAMGROUP-UD4-3000 8GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Samsung M378A1K43BB2-CRC 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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Kingston KHX3200C20S4/8G 8GB