Ramaxel Technology RMT3020EC58E9F1333 4GB vs Crucial Technology CT4G4DFS824A.C8FADP 4GB

总分

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

差异规格评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB

需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB

报告一个错误

Crucial Technology CT4G4DFS824A.C8FADP 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FADP 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 -16% 更低的延时
更快的读取速度，GB/s

16 9

测试中的平均数值
更快的写入速度，GB/s

11.0 5.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3020EC58E9F1333 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 25
读取速度，GB/s

9.0 16.0
写入速度，GB/s

5.7 11.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1274 2544

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M378A2K43CB1-CTD 16GB

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Kingston KHX3200C18D4/8G 8GB

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Kingston 9905702-119.A00G 8GB

Kingston 9905702-119.A00G 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB