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Kingston ACR512X64D3S13C9G 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Kingston ACR512X64D3S13C9G 4GB vs Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 49
    左右 45% 更低的延时
  • 更快的读取速度，GB/s
    11.5 left arrow 10.7
    测试中的平均数值
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB 需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
报告一个错误
  • 更快的写入速度，GB/s
    8.6 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 49
  • 读取速度，GB/s
    11.5 left arrow 10.7
  • 写入速度，GB/s
    8.5 left arrow 8.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 2504

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Samsung V-GeN D4S16GL32A8TS 16GB
Samsung V-GeN D4S16GL32A8TS 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Corsair CM4X8GF2133C15S2 8GB
Corsair CM4X8GF2133C15S2 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-2133C15-4GRS 4GB
G Skill Intl F4-2133C15-4GRS 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology C 8GB
Crucial Technology C 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Mushkin MRA4S320GJJM16G 16GB
Mushkin MRA4S320GJJM16G 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Kingston KHX3466C16D4/16GX 16GB
Kingston KHX3466C16D4/16GX 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905701-008.A00G 16GB
Kingston 9905701-008.A00G 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Hyundai Inc GR26C16S8K2HU416 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
内存RAM