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Ramaxel Technology RMT3020EC58E9F1333 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB vs Dust Leopard DDR4-2400 C16 8GB 8GB

总分
star star star star star
Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分
star star star star star
Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

差异 规格 评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB 需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 53
    左右 45% 更低的延时
Dust Leopard DDR4-2400 C16 8GB 8GB 需要考虑的原因
Dust Leopard DDR4-2400 C16 8GB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.2 left arrow 9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 5.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3020EC58E9F1333 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 53
  • 读取速度，GB/s
    9.0 left arrow 20.2
  • 写入速度，GB/s
    5.7 left arrow 11.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 2476

Ramaxel Technology RMT3020EC58E9F1333 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB

Dust Leopard DDR4-2400 C16 8GB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMD32GX4M4C3200C14C 8GB
Corsair CMD32GX4M4C3200C14C 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3200C22-16GRS 16GB
G Skill Intl F4-3200C22-16GRS 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905744-027.A00G 16GB
Kingston 9905744-027.A00G 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CMD16GX4M2B3733C17 8GB
Corsair CMD16GX4M2B3733C17 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
G Skill Intl F4-3466C16-8GTZSK 8GB
G Skill Intl F4-3466C16-8GTZSK 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C14-32GTRG 32GB
G Skill Intl F4-3200C14-32GTRG 32GB
内存RAM