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Ramaxel Technology RMT3020EC58E9F1333 4GB
Samsung M471A5244CB0-CWE 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB vs Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

差异 规格 评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB 需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 38
    左右 24% 更低的延时
Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 5.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3020EC58E9F1333 4GB
Samsung M471A5244CB0-CWE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 38
  • 读取速度，GB/s
    9.0 left arrow 15.5
  • 写入速度，GB/s
    5.7 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 2283

Ramaxel Technology RMT3020EC58E9F1333 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9905471-001.A01LF 2GB
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内存RAM
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Corsair CMSX4GX3M1A1600C9 4GB
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Apacer Technology 78.CAGP7.AFW0C 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
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Apacer Technology 78.C1GMM.BAC0B 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
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Mushkin MRA4S266GHHF32G 32GB
内存RAM
Micron Technology 36ASF2G72PZ-2G1A2 16GB
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Avant Technology W642GU42J5213N 16GB
Avant Technology W642GU42J5213N 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
内存RAM
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology CT2K102464BD160B 8GB
Corsair CMT16GX4M2Z3200C16 8GB
Corsair CMT16GX4M2Z3200C16 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C15-8GTZKO 8GB
G Skill Intl F4-3200C15-8GTZKO 8GB
内存RAM
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-2400C15-8GNT 8GB
G Skill Intl F4-2400C15-8GNT 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
内存RAM
Crucial Technology CT25664BA1339.M8FK 2GB
Crucial Technology CT25664BA1339.M8FK 2GB
G Skill Intl F4-2400C15-8GFXR 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM