Ramaxel Technology RMT3160ED58E9W1600 4GB vs Crucial Technology CT8G4SFS8266.C8FN 8GB

总分

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分

Crucial Technology CT8G4SFS8266.C8FN 8GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

差异规格评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB

报告一个错误

Crucial Technology CT8G4SFS8266.C8FN 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8266.C8FN 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 40

左右 -5% 更低的延时
更快的读取速度，GB/s

15.7 12.3

测试中的平均数值
更快的写入速度，GB/s

13.3 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3160ED58E9W1600 4GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 38
读取速度，GB/s

12.3 15.7
写入速度，GB/s

7.8 13.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1806 2855

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Crucial Technology CT8G4SFS8266.C8FN 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

V-Color Technology Inc. TL48G32S8KSRGB16 8GB

V-Color Technology Inc. TL48G32S8KSRGB16 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMWX8GD3600C18W4 8GB

Corsair CMWX8GD3600C18W4 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Nanya Technology NT2GC64B88G0NS-CG 2GB

Nanya Technology NT2GC64B88G0NS-CG 2GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX2400C14S4/4G 4GB

Kingston KHX2400C14S4/4G 4GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Corsair CMW32GX4M4K4266C19 8GB

Corsair CMW32GX4M4K4266C19 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMH32GX4M2D3600C18 16GB

Corsair CMH32GX4M2D3600C18 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

SK Hynix HMT125U6DFR8C-H9 2GB

SK Hynix HMT125U6DFR8C-H9 2GB