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Ramaxel Technology RMT3170EB68F9W1600 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 43
    左右 -115% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 20
  • 读取速度，GB/s
    11.4 left arrow 18.9
  • 写入速度，GB/s
    7.7 left arrow 14.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 3022

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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