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Ramaxel Technology RMT3170EB68F9W1600 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 43
    左右 -79% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 24
  • 读取速度，GB/s
    11.4 left arrow 17.0
  • 写入速度，GB/s
    7.7 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 2703

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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Corsair CMK16GX4M2D3600C18 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMU32GX4M4C3000C15 8GB
Corsair CMU32GX4M4C3000C15 8GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Qimonda 72T128420EFA3SB2 1GB
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G Skill Intl F4-4000C18-8GVK 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMW64GX4M8A2666C16 8GB
Corsair CMW64GX4M8A2666C16 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMD32GX4M4B2800C14 8GB
Corsair CMD32GX4M4B2800C14 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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Apacer Technology GD2.1527CS.001 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston KF3600C18D4/16GX 16GB
Kingston KF3600C18D4/16GX 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMK16GX4M2Z2933C16 8GB
Corsair CMK16GX4M2Z2933C16 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3200C16-16GVKA 16GB
G Skill Intl F4-3200C16-16GVKA 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Super Talent F26UB16GH 16GB
Super Talent F26UB16GH 16GB
内存RAM