Ramaxel Technology RMT3170EB68F9W1600 4GB vs Corsair CMG32GX4M2D3600C18 16GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

Corsair CMG32GX4M2D3600C18 16GB

需要考虑的原因
Corsair CMG32GX4M2D3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

17.8 11.4

测试中的平均数值
更快的写入速度，GB/s

14.6 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

Corsair CMG32GX4M2D3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

11.4 17.8
写入速度，GB/s

7.7 14.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1823 3573

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4X16GE2133C13K8 16GB

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Samsung M393B2G70BH0-YK0 16GB

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Kingston KKN2NM-MIE 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Micron Technology 18ASF2G72PDZ-2G3D1 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Teikon TMA851S6CJR6N-VKSC 4GB

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A-DATA Technology AO1P26KC8T1-BPXS 8GB

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Kingston 9905701-021.A00G 16GB

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Corsair CM5S16GM4800A40N2 16GB

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Kingston 9965525-140.A00LF 8GB

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Kingston 9905663-006.A00G 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

Kingston 99U5663-003.A00G 16GB

Kingston 99U5663-003.A00G 16GB