Ramaxel Technology RMT3170EB68F9W1600 4GB vs Crucial Technology CT16G4SFD8266.M16FH 16GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

Crucial Technology CT16G4SFD8266.M16FH 16GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

Crucial Technology CT16G4SFD8266.M16FH 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.M16FH 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 43

左右 -95% 更低的延时
更快的读取速度，GB/s

18.4 11.4

测试中的平均数值
更快的写入速度，GB/s

14.4 7.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 22
读取速度，GB/s

11.4 18.4
写入速度，GB/s

7.7 14.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1823 3255

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Panram International Corporation W4U2400PS-4G 4GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston XRMWRN-HYA 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CM4X4GF2400Z16K4 4GB

Corsair CM4X4GF2400Z16K4 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMW32GX4M4C3200C14 8GB

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Corsair CMK64GX4M8Z2933C16 8GB

Corsair CMK64GX4M8Z2933C16 8GB