RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hexon Technology Pte Ltd HEXON 1GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Hexon Technology Pte Ltd HEXON 1GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    62 left arrow 86
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 12.1
    测试中的平均数值
InnoDisk Corporation M4S0-4GSSNCSJ 4GB 需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
报告一个错误
  • 更快的写入速度，GB/s
    5.7 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 86
  • 读取速度，GB/s
    3,556.6 left arrow 12.1
  • 写入速度，GB/s
    1,843.6 left arrow 5.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    542 left arrow 1220

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
内存RAM
Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905624-010.A00G 4GB
Kingston 9905624-010.A00G 4GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston KF2666C13D4/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9905678-138.A00G 8GB
Kingston 9905678-138.A00G 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CM4X16GC3000C16K8 16GB
Corsair CM4X16GC3000C16K8 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-3600C18-8GVK 8GB
G Skill Intl F4-3600C18-8GVK 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Kingston 9905744-077.A00G 16GB
Kingston 9905744-077.A00G 16GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM