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Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-2400C15-8GFXR 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs G Skill Intl F4-2400C15-8GFXR 8GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
G Skill Intl F4-2400C15-8GFXR 8GB

G Skill Intl F4-2400C15-8GFXR 8GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
G Skill Intl F4-2400C15-8GFXR 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GFXR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 43
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-2400C15-8GFXR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 27
  • 读取速度，GB/s
    11.4 left arrow 17.8
  • 写入速度，GB/s
    7.7 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 3337

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

G Skill Intl F4-2400C15-8GFXR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Samsung M471B5273CH0-CH9 4GB
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内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Gloway International (HK) STK4U2400D17161C 16GB
Gloway International (HK) STK4U2400D17161C 16GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
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Apacer Technology 78.BAGMD.AF20B 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3733C17-8GTZKW 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston ASU21D4U5S1MB-4 4GB
Kingston ASU21D4U5S1MB-4 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Crucial Technology CT16G4SFS832A.M8FB 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5624-001.A00G 8GB
Kingston 99U5624-001.A00G 8GB
内存RAM
AMD AE34G1601U1 4GB
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Kingston KHX3000C15/16GX 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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G Skill Intl F4-3000C14-16GVKD 16GB
内存RAM
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内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43BB2-CWE 16GB
内存RAM