PNY Electronics PNY 2GB vs Samsung M471A2G43BB2-CWE 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 60

左右 55% 更低的延时

Samsung M471A2G43BB2-CWE 16GB

需要考虑的原因
Samsung M471A2G43BB2-CWE 16GB

报告一个错误

更快的读取速度，GB/s

14.9 13.8

测试中的平均数值
更快的写入速度，GB/s

12.0 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Samsung M471A2G43BB2-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 60
读取速度，GB/s

13.8 14.9
写入速度，GB/s

8.4 12.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2274 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-17000CL9-4GBXLD 4GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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Avant Technology F6451U64F9333G 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingston 9905713-028.A00G 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Corsair CMK16GX4M2K4266C16 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

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Corsair CMD16GX4M2B3200C14 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMD32GX4M4C3200C16-R 8GB

Corsair CMD32GX4M4C3200C16-R 8GB