RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Samsung M471A2G43BB2-CWE 16GB
Compare
PNY Electronics PNY 2GB vs Samsung M471A2G43BB2-CWE 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
Samsung M471A2G43BB2-CWE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
60
Around 55% lower latency
Reasons to consider
Samsung M471A2G43BB2-CWE 16GB
Report a bug
Faster reading speed, GB/s
14.9
13.8
Average value in the tests
Faster write speed, GB/s
12.0
8.4
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung M471A2G43BB2-CWE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
60
Read speed, GB/s
13.8
14.9
Write speed, GB/s
8.4
12.0
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2274
2511
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Samsung M471A2G43BB2-CWE 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-038.A00LF 4GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
PNY Electronics PNY 2GB
Samsung M471A2G43BB2-CWE 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9905630-025.A00G 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMWB8G1L2666A16W4 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Apacer Technology GD2.11173T.001 4GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9965596-016.B01G 8GB
AMD R534G1601U1S-UO 4GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2666C13/16GX 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMH16GX4M2Z3200C16 8GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Report a bug
×
Bug description
Source link