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Ramaxel Technology RMT3170EB68F9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
比较
Ramaxel Technology RMT3170EB68F9W1600 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
总分
Ramaxel Technology RMT3170EB68F9W1600 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
更快的读取速度,GB/s
11.4
9.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
38
43
左右 -13% 更低的延时
更快的写入速度,GB/s
8.3
7.7
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
38
读取速度,GB/s
11.4
9.4
写入速度,GB/s
7.7
8.3
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1823
2110
Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F3-2133C9-4GAB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-028.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
SK Hynix HYMP112U64CP8-Y5 1GB
V-Color Technology Inc. TD416G26D819-VC 16GB
Samsung M393B4G70EMB-CK0 32GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Samsung M471B5273DH0-CK0 4GB
Golden Empire CL16-16-16 D4-3200 4GB
Samsung M471A1K43DB1-CTD 8GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Kingston 9905403-156.A00LF 2GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Samsung M471B5173EB0-YK0 4GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Team Group Inc. UD5-6400 16GB
ADVAN Inc AM42E28UD04T-NVL 4GB
Nanya Technology M2X4G64CB88CHN-DG 4GB
Samsung M393A2K43DB3-CWE 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
Elpida EBE21UE8ACUA-8G-E 2GB
Corsair CM4X16GE2400C16S4 16GB
Samsung M3 78T5663EH3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Corsair VS1GB800D2 1GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
报告一个错误
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Bug description
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