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Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M391A1G43EB1-CPB 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Samsung M391A1G43EB1-CPB 8GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
Samsung M391A1G43EB1-CPB 8GB 需要考虑的原因
Samsung M391A1G43EB1-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 43
    左右 -72% 更低的延时
  • 更快的读取速度，GB/s
    12.4 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M391A1G43EB1-CPB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 25
  • 读取速度，GB/s
    11.4 left arrow 12.4
  • 写入速度，GB/s
    7.7 left arrow 10.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 1511

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Samsung M391A1G43EB1-CPB 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston KHX1600C9D3/8G 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
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内存RAM
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A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
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内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
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内存RAM
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内存RAM
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Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-2133C15-8GRS 8GB
G Skill Intl F4-2133C15-8GRS 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
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内存RAM
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Crucial Technology BL8G32C16S4B.8FE 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-4000C19-16GTRG 16GB
G Skill Intl F4-4000C19-16GTRG 16GB
内存RAM