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Ramos Technology EWB8GB681CA3-16IC 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB vs Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

总分
star star star star star
Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

差异 规格 评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB 需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 30
    左右 17% 更低的延时
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.9 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 30
  • 读取速度，GB/s
    15.3 left arrow 15.5
  • 写入速度，GB/s
    9.8 left arrow 12.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2646 left arrow 3044

Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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SK Hynix HMA82GS6CJR8N-VK 16GB
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内存RAM
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内存RAM
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Kingston ACR512X64D3S13C9G 4GB
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内存RAM