SK Hynix HMT451S6BFR8A-PB 4GB vs Crucial Technology BLS16G4D30BESB.16FD 16GB

总分

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分

Crucial Technology BLS16G4D30BESB.16FD 16GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

差异规格评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 50

左右 12% 更低的延时

Crucial Technology BLS16G4D30BESB.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4D30BESB.16FD 16GB

报告一个错误

更快的读取速度，GB/s

17.2 12.3

测试中的平均数值
更快的写入速度，GB/s

13.1 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 50
读取速度，GB/s

12.3 17.2
写入速度，GB/s

7.8 13.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1977 3277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Crucial Technology BLS16G4D30BESB.16FD 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

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Kingston 99U5584-004.A00LF 4GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMT64GX4M8X3600C18 8GB

Corsair CMT64GX4M8X3600C18 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB

V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB