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Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMD16GX4M4B3200C14 4GB

Ramos Technology EWB8GB681CA3-16IC 8GB vs Corsair CMD16GX4M4B3200C14 4GB

总分
star star star star star
Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分
star star star star star
Corsair CMD16GX4M4B3200C14 4GB

Corsair CMD16GX4M4B3200C14 4GB

差异 规格 评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB 需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 28
    左右 11% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 9.2
    测试中的平均数值
Corsair CMD16GX4M4B3200C14 4GB 需要考虑的原因
Corsair CMD16GX4M4B3200C14 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMD16GX4M4B3200C14 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 28
  • 读取速度，GB/s
    15.3 left arrow 13.0
  • 写入速度，GB/s
    9.8 left arrow 9.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2646 left arrow 2586

Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较

Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB

Corsair CMD16GX4M4B3200C14 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M471B5173QH0-YK0 4GB
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Mushkin 99[2/7/4]204F 4GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMD16GX4M4B3200C14 4GB
Corsair CMD16GX4M4B3200C14 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
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内存RAM
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内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston RB26D4U9D8MEH-16 16GB
Kingston RB26D4U9D8MEH-16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-3200C14-16GTZDCB 16GB
内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
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Gloway International Co. Ltd. YCT4S2666D19081C 8GB
内存RAM
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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G Skill Intl F4-3000C16-8GTRG 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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内存RAM
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内存RAM
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Samsung M393B2G70BH0-YK0 16GB
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Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
内存RAM
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Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM